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更新時間:2024-04-30 08:32:10瀏覽次數(shù):131次
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技術(shù)參數(shù):
1. 元素分析范圍從鈉(Na)到鈾(U)
Measurable elements: Na-U
2.. 元素含量分析范圍為1ppm到99.99%
Element content: 1ppm-99.99%
3. 低檢出限:1ppm
Detection limit: 1ppm
3. 測量時間:60-200秒(可調(diào))
Measurement time: 60-200s (adjustable)
4. 儀器工作電源:AC220±5V
Power:AC220±5V
5. 能量分辨率為129±5eV
Energy resolution: 129±5 eV
6. X 射線光管大輸出電流:1mA
X-ray tube maximum output current: 1mA
7. 極限壓力:6.7×10-2 Pa
Ultimate pressure:6.7×10-2 Pa
8.樣品腔尺寸:610*320*100(mm)(不抽真空)/Φ100*h75(mm) (真空樣品腔)
Sample chamber size: 610*320*100(mm) (Without vacuum)/Φ100*h75(mm) (Vacuum)
9.多次測量重復(fù)性(以標(biāo)準(zhǔn)樣品為準(zhǔn)):±0.05%(高含量)/±0.002%(微量)
Long-time working stability(subject to standard sample):±0.05%(high content)
/±0.002%(micro-content)
10.長期工作穩(wěn)定性(以標(biāo)準(zhǔn)樣品為準(zhǔn))±:0.06% (高含量)/±0.0025%(微量)
Excellent repeatability(subject to standard sample):0.06%((high content)/±0.0025%(micro-content)
產(chǎn)品特點:
1. 采用的美國SDD(SILICON DRIFT DETECTOR)硅漂移探測器,分辨率更高, 大大提高了輕元素的檢出限,標(biāo)準(zhǔn)檢出限較SI-PIN探測器提高100倍;測量范圍更寬,基本涵蓋了各種常規(guī)材料元素分析要求;
The silicon draft detector imported from America with higher energy resolution largely improves the detection limit of light elements which is 100 times higher than that of Si-pin detector. Measurement scope is wider which can almost meet element analysis requirements of all conventional material.
2. 配置美國數(shù)據(jù)集成處理系統(tǒng),數(shù)據(jù)采集速度更快,測量更穩(wěn)定,重復(fù)性和長期穩(wěn)定性更好;
Data integration processing system imported from America makes data acquisition faster, measurement more stable with excellent repeatability and long-time stability.
3. 配置新開發(fā)的專用測量軟件,集成多種圖形計算方法,測量數(shù)據(jù)更精準(zhǔn),更穩(wěn)定;
Up-to-date software integrating multiple image computering methods makes data measurement more accurate and stable.
4. 軟件全面監(jiān)控儀器主要核心部件運行狀態(tài),使用更安全;
Software full monitors core parts running ensures safe operation.
5. 配置專門開發(fā)的真空系統(tǒng),真空性能更好,測試效果更佳;
Specialized vacuum system offers better vacuum performance and excellent testing results.
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